Bi掺杂CaCu_3Ti_4O_(12)薄膜的制备及压敏性能

Preparation and Pressure Sensitivity of Bi-Doped CaCu_3Ti_4O_(12) Thin Films

以溶胶-凝胶法在Si(100)基底上制备了Ca_(1-3x/2)Bi_xCu_3Ti_4O_(12)(CBCTO)薄膜。XRD结果表明,于900℃退火1 h可形成多晶CaCu_3Ti_4O_(12)(CCTO)相。SEM显示Bi离子掺杂使CCTO晶粒异常生长。通过压敏电阻测试仪分析了CBCTO薄膜的压敏电阻特性,所有样品均呈现明显的非线性特性,用双肖特基势垒模型进行了充分说明。Ca_(0.925)Bi_(0.05)Cu_3Ti_4O_(12)(x=0.050)薄膜具有最小的电位梯度与最小的漏电流,可良好应用在低压压敏电阻开关等领域。

Ca1-3x/2BixCu3Ti4O12(CBCTO)thin films were prepared on Si(100)substrates by sol-gel method.XRD results showed that the polycrystalline CCTO phase could be formed by annealing at 900℃for 1 h.SEM showed that the doped Bi ions caused the CCTO grains grow abnormally.The varistor characteristics of CBCTO films were analyzed by varistor tester.All the samples showed obvious non-linearity characteristics,which was fully demonstrated by the double Schottky Barrier model.The Ca0.925Bi0.05Cu3Ti4O12(x=0.050)thin film had the smallest potential gradient and the lowest leakage current,which is suited for low voltage varistor switches and other fields.