摘要
在LiNO_3/SiO_2/Si基板上制备了Li_(1-x)Bi_(4+x)Ti_4O_(15)系列薄膜(x=0.3、0.4、0.5、0.6),并系统分析了这些薄膜的微观结构以及铁电、介电及漏电等电学特性。研究结果表明,在氮气气氛中以600℃持温30 min制备的单一相薄膜中Li0.5Bi4.5Ti4O15薄膜的结晶效果最好,且在其表面可成长出独立晶粒分布状态;x为0.5时薄膜的剩余极化强度2Pr=53.5μC/cm2、矫顽场2Ec=144.2 k V/cm,此时薄膜的铁电性能相对最佳;该系列薄膜的介电常数介于37~100,介电损失相对偏高,介于0.7~1.0;所有薄膜的漏电流均随外加电压的增加而逐渐增大,其中Li0.5Bi4.5Ti4O15薄膜漏电流最小,外加电压为10 V时其值约为3.88×10-6A。
A series of Li1-xBi4+xTi4O15(x=0.3,0.4,0.5,0.6)films were prepared on LiNO3/SiO2/Si substrate and then their micro-structure and electrical properties included ferroelectric property,dielectric property and leakage current were systematically analyzed.Results showed that the crystallinity of Li0.5Bi4.5Ti4O15 films annealed at 600℃for 30 min in nitrogen atmosphere was the best and the independent grain distribution could be produced on the surface.The ferroelectric property of Li0.5Bi4.5Ti4O15 film with remanent polarization 2Pr=53.5μC/cm2 and coercive field 2Ec=144.2 kV/cm was relative optimum.The dielectric constant of these films was 37~100 and the dielectric loss of 0.7~1.0 was slightly larger.The leakage currents of the films were increasing with applied voltage and that of Li0.5Bi4.5Ti4O15 film was the minimum,about 3.88×10-6 A for applied voltage being 10 V.
作者
孟靖华
杨丽清
焦斌权
Meng Jinghua;Yang Liqing;Jiao Binquan(Chongqing University City Science and Technology College of Civil Engineering,Chongqing 402167,China;Chongqing University City Science and Technology Institute of Electrical Engineering;College of Resources and Environmental Science,Chongqing University)
出处
《无机盐工业》
CAS
北大核心
2018年第9期34-37,共4页
Inorganic Chemicals Industry
基金
国家自然科学基金项目(51562014)
