InSb薄膜热导率温度特性及传热机理

Temperature dependent thermal conductivity of InSb thin film and heat transfer mechanism

InSb薄膜广泛应用于高精度的光电存储、红外探测和红外热成像技术以及超分辨掩膜层技术中.热导率及其温度特性是影响薄膜实际应用的关键因素.采用瞬态热反射方法测试了厚度为70~200nm的InSb薄膜在非晶态和晶态下热导率,并探讨了其中的传热机理.对于晶态InSb薄膜,热导率为(0.55±0.055)W/(m·K),并且随温度的变化不明显;而非晶态InSb薄膜在温度450K以下时热导率为(0.37±0.037)W/(m·K).当温度在450K以上时,由于薄膜从非晶态转化为晶态,其热导率经历了一个突然的升高过程.无论是晶态还是非晶态薄膜样品,热导率与薄膜厚度都没有明显依赖关系.研究结果可以为InSb薄膜的实际应用提供有益的参考.

The InSb thin film is widely used in high precision photoelectric storage,infrared detection,infrared thermal imaging technology and super resolution layer mask technology.Thermal conductivity and its temperature dependent characteristic are the key factors for the film application.The thermal conductivity of InSb thin film under amorphous and crystalline states with thickness of 70-200 nm is tested based on the transient thermal reflection method.And the heat transport mechanism is discussed.For crystalline InSb thin film,its thermal conductivity is(0.55±0.055)W/(m·K),and the value is hardly changed with the change of temperature;and for amorphous InSb thin film,its thermal conductivity is(0.37±0.037)W/(m·K)when the temperature is below 450 K.While when the temperature is above 450 K,due to the changes from amorphous into crystalline,the thermal conductivity has experienced a sudden rise.Neither crystalline nor amorphous thin film samples,their thermal conductivities change with the change of the sample thickness.This work can provide a beneficial reference for the practical application of InSb thin film.