GaN衬底上Hf_(0.5)Zr_(0.5)O_2薄膜的阻变性能与机理研究

Ｒesistive switching characteristics of ferroelectric Hf_(0.5)Zr_(0.5)O_2 thin films on GaN substrate

采用脉冲激光沉积法在n-Ga N衬底上制备了铁电Hf_(0.5)Zr_(0.5)O_2薄膜,通过测量样品的P-E曲线与I-V特性曲线研究该异质结构的铁电特性及阻变特性。测试结果表明HZO薄膜具有良好的铁电极化特性及双极性电阻开关特性,HZO薄膜的阻值开关比达10~4。薄膜同时还表现出良好的抗疲劳特性和保持特性,80次翻转后窗口保持同一个数量级,在10~5s内器件仍保持稳定。对薄膜的I-V曲线进行拟合分析,表明该薄膜的导电机理为界面肖特基发射模型。

In this work,ferroelectric Hf0.5 Zr0.5 O2 thin films were deposited on n-GaN substrate by pulsed laser desposition.The ferroelectric and resistive properties of the heterostructures were investigated.The Hf0.5 Zr0.5 O2 films show both well-established P-E hysteresis loops,and bipolar resistive switching characteristics with high OFF/ON ratio over 104.The HZO thin film also exhibits good endurance and retention characteristics.The resistive switching property does not degrade after 80 cycles,and the retenion property does not degrade for up to 105 s.Fitting analysis of I-V curves demonstrates that the resistive switching behavior in Hf0.5 Zr0.5 O2 films can be understood by Schottky emission conduction.