稀土离子掺杂AlN薄膜发光材料的研究进展

Research progress of rare earth ion-doped AlN thin film luminescent materials

纤锌矿结构氮化铝(AlN)是一种典型的直接宽禁带化合物半导体,稀土离子掺入后可作为发光材料应用在显示、照明等众多领域。对稀土掺杂氮化铝薄膜的制备方法,结构损伤、发光特性、器件研究等进行了综述,并着重总结了影响发光性能的因素。最后对该研究方向进行了展望。

Wurtzite aluminum nitride(AlN)is a compound semiconductor with typical direct wide band gap.Rare earth ion-doped AlN films as luminescent materials can be applied in many fields,such as display,lighting and so on.In this paper,preparation methods,structure damage,luminescence characteristics and device of rare earth doped aluminum nitride thin films are reviewed,and the factors influencing the luminescence properties are emphatically summarized.Finally,the future research direction is prospected.