CeO_2/ZrO_2硅溶胶复合磨料的制备及其对蓝宝石抛光性能的影响

Preparation of CeO_2/ZrO_2 Colloidal SiO_2 Composite Abrasive and Its Polishing Behavior on Sapphire

以硅溶胶为原料,通过化学沉淀法对硅溶胶进行铈锆改性,制备出抛光用单分散的CeO_2/ZrO_2硅溶胶复合磨料。考察了不同铈锆掺杂量的CeO_2/ZrO_2硅溶胶复合磨料对蓝宝石晶片抛光性能的影响,研究了CeO_2/ZrO_2硅溶胶复合磨料对蓝宝石晶片的抛光机理。通过透射电子显微镜(TEM)、扫描电子显微镜(SEM)-能谱仪(EDS)、X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)对样品的组成、形貌等进行表征。以所制备的复合磨料对蓝宝石晶片进行抛光,利用原子力显微镜(AFM)检测抛光后的蓝宝石晶片表面粗糙度。结果表明:CeO_2/ZrO_2硅溶胶复合磨料中最佳的铈锆掺杂量为:铈掺杂量为1.5wt%,锆掺杂量为1.0wt%,材料去除速率可以达到36.1 nm/min,表面粗糙度可以达到0.512 nm,而相同条件下纯硅溶胶抛光后的蓝宝石表面粗糙度为1.59 nm,材料去除速率为18.4nm/min,该复合磨料表现出较好的抛光性能。

Taking colloidal SiO 2 as raw materials,monodisperse CeO 2/ZrO 2 colloidal SiO 2 composite abrasives were synthesized by chemical precipitation method and used to polish.The effect of polishing performance of the CeO 2/ZrO 2 colloidal SiO 2 composite abrasives of different cerium and zirconium doping amounts on sapphire wafer were studied,the polishing mechanism of CeO 2/ZrO 2 colloidal SiO 2 on sapphire wafer were investigated.Transmission electron microscope(TEM),scanning electron microscope(SEM)-energy disperse spectroscopy(EDS),X-ray photoelectron spectroscopy(XPS),X-ray diffractomer(XRD)used to characterize the phase composition and morphology of the samples.The as-prepared composite abrasives were used as polishing abrasives for Chemical Mechanical Polishing(CMP)of a sapphire substrate,then the surface roughness of sapphire substrate after polishing was measured by atomic force microscope(AFM).The results show that the optimal doping amount of cerium and zirconium:cerium doping amount is 1.5wt%,Zr doping amount is 1.0wt%,the material removal rate can reach 36.1 nm/min,the surface roughness can reach 0.512 nm,however,those are 18.4 nm/min and 1.59 nm for colloidal SiO 2 under same condition,the composite abrasive showed better performance of polishing.