质子在砷化镓材料中产生位移损伤的Geant4模拟

Geant4 Simulation of Proton Displacement Damage in GaAs

本文使用Geant4模拟了1、5、10、20、50、100、500、1 000MeV能量的质子入射GaAs的位移损伤情况。随入射质子能量的增大,产生的初级离位原子(PKA)数目增加、种类增多;PKA能谱分布总体上呈递减趋势,PKA在低能量区间所占份额降低,在高能量区间所占份额升高。研究结果表明,辐射缺陷浓度在质子入射方向上遵循布拉格规律。

The displacement damage induced by 1,5,10,20,50,100,500,1 000 MeV protons in GaAs was simulated with the Geant4 software.It’s found that the number and variety of PKA increase with the incident proton energy.And with the increase of incident proton energy,the PKA energy spectrum has a decrease variation,and the proportion of PKA at low energy range is reduced,while that at high energy range is raised.Simulation results show that the defect concentration has a typical Bragg’s distribution along the proton incident path.