摘要
为了提高功率肖特基整流管的反向击穿电压、抗浪涌能力,采取加场限环的方法从有源区参数、外延材料、流片工艺、产品电参数、可靠性等方面进行全面设计,制造了一种新型结势垒肖特基整流管JBS(Junction Barrier Schottky Rectifier)。经测试,器件的电参数水平正向电压VF为0.85 V^0.856 V,反向电流IR为4.0μA^50.5μA,反向电压VR为307.5 V^465.2 V,抗静电水平从低温退火的6 k V^12 k V提高到15 k V。经高温直流老化测试,器件的可靠性达到了预期的设计要求。
In order to improve the reverse breakdown voltage of power Schottky rectifier,anti-surge capacity,the method with field limiting ring designed from source area parameters,epitaxial material,chip technology,products electrical parameters,and reliability of the products is adopted to manufacture a new type of junction barrier Schottky rectifier tube(Junction Barrier Schottky Rectifier,JBS).After testing,electricity parametes show the levels of forwards voltage V F,0.85 V^0.856 V;reverse current I R,4.0μA^50.5μA;reverse voltage V R,307.5 V^465.2 V,anti-static level from low temperature annealing of 6 kV^12 kV to 15 kV.After high temperature aging,the level of reliability of electric parameters meet the expected design requirements.
作者
闫丽红
王永顺
韩根亮
YAN Lihong;WANG Yongshun;HAN Genliang(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China;Insititute of Sensor Technology,Gansu Academy of Sciences,Lanzhou 730070,China)
出处
《电子器件》
CAS
北大核心
2018年第5期1097-1100,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金项目(61366006)
甘肃省科技支撑计划项目(1304GKCA012)
关键词
微电子学与固体电子学
结势垒肖特基整流管
反向击穿电压
场限环
microelectronics and solid state electronics
junction barrier Schottky rectifier
reverse breakdown voltage
field limiting ring
