一种新型的常通型GaN HEMT器件

A Novel Normally-on GaN HEMT Device

对新型常通型GaN HEMT器件的特性和参数进行了研究。阐述了其静态和动态特性以及电流崩塌问题。针对其动态特性,与相近定额的Si MOSFET器件(TK2Q60D)在开通、关断时间与栅源电压的关系方面进行了对比,探讨了常通型GaN HEMT器件在不同输入电压和不同开关频率下的电流崩塌现象,并采用升压(Boost)电路,对常通型GaN HEMT器件和Si MOSFET器件的最高工作频率能力进行了对比。实验结果表明,常通型GaN HEMT器件具有更高的工作频率,且工作频率的升高不影响电流崩塌现象。

The characteristics and parameters of a new normal-on GaN HEMT device are presented.The static characteristics,dynamic characteristics and current collapse are first analyzed.Then,in view of its dynamic characteristics,the relationships between the turn-on and turn-off time and the gate-source voltage are given with comparison with Si MOSFET device(TK2Q60D)in the similar rating.Furthermore,the current collapse phenomenon of normal-on GaN HEMT device is investigated under different input voltages and switching frequencies.Finally,the maximum operating frequency capability of normaly-on GaN HEMT device and Si MOSFET device is compared in a Boost converter.The experimental results show that the normal-on GaN HEMT devices have higher operating frequency,and the increase of the operating frequency does not affect the current collapse phenomenon.