大范围ReS2纳米带的化学气相沉积制备及特性表征

Chemical Vapor Deposition Sythesis and Characterization of Large Area ReS_2 Nanoribbons

采用化学气相沉积方法,在整个SiO_2(300 nm)/Si衬底上制备出了大面积、高质量的单层及多层ReS_2纳米带,纳米带的长度可达150μm。利用光镜、原子力显微镜(AFM)、荧光(PL),拉曼(Raman)以及X射线光电子能谱分析(XPS)等手段对所得不同层数的ReS_2样品进行了表征。结果表明:所制备的ReS_2纳米带的拉曼信号与化学气相沉积方法制备的(CVD)单层及多层的薄膜材料差别不大,而其荧光峰出现了明显的展宽,且峰位出现了明显的蓝移。化学气相沉积法(CVD)制备ReS_2纳米带操作简单,可控性与可重复性高,对其基础研究和未来潜在应用有着比较重要的现实意义。

Large-area and high-quality monolayer(1L)and multilayer(ML)ReS 2 nanoribbons were synthesized by a chemical vapor deposition(CVD)method on the SiO 2(300 nm)/Si substrate.The length can reach to 150μm.The as-grown ReS 2 nanoribbon samples were characterized by optical microscope(OM),atomic force microscope(AFM),fluorescence(PL),Raman and X-ray photoelectron spectroscopy(XPS)methods.The results shows that the Raman signals of the as-grown ReS 2 nanoribbons are similar with that of the monolayer or the multilayer film synthesized by CVD method,however,the width of the photoluminesence is obviously enlarged and the position of it is blue shifted.The CVD method in this report is simple,easy to control and of high repeatability.The present method of ReS 2 nanoribbons is meaningful for its fundamental research and the future potential applications.