摘要
针对大功率绝缘栅双极型晶体管(IGBT)应用中存在的关断过电压问题,提出了一种两段式有源门极关断技术。在IGBT关断过程中,通过在IGBT集电极和门极之间使用2个小容值的高压陶瓷电容和一串瞬态抑制二极管(TVS),在不同关断阶段,获得2个差别较大的门极反馈增益,从而达到限制关断过电压和控制关断电压上升率的目的。在Saber仿真环境中,与其它有源门极关断技术进行了充分比较和研究。
Turn-off over voltage is a severe and common problems in high power IGBT applicotions,a novel active gate drive method for high power IGBTs was proposed.During turn-off,it made use of 2 simple capacitors and several transient voltage suppressors(TVS)between IGBT’s collector and emitter to gain different feedback gains in different turn-off transient period.In this way,the propoesd method suppressed the turn-off over voltage and control turn-off voltage rise slope.Comprehensive study among several application oriented methods was carried out to show its advantages by Saber simulator.
作者
王倩
施荣
刘丽
李宁
WANG Qian;SHI Rong;LIU Li;LI Ning(School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,Shaanxi,China;State Grid Shaanxi Electric Power Company Economic Research Institute,Xi’an 710065,Shaanxi,China;63751 Troops of the PLA,Xi’an 710043,Shaanxi,China)
出处
《电气传动》
北大核心
2018年第10期75-78,共4页
Electric Drive
基金
国家自然科学基金项目(51507140)
陕西省自然科学基础研究计划(2018JM5041)
电力设备电气绝缘国家重点实验室开放课题(EIPE17209)
关键词
有源关断
过电压
绝缘栅双极型晶体管
active turn off
over voltage
insulated gate bipolar transistor(IGBT)
