GaSb基光泵浦半导体碟片激光器的研究进展(特邀)

Research progress of GaSb based optically pumped semiconductor disk lasers(invited)

GaSb基光泵浦半导体碟片激光器(OP-SDLs)可以获得高光束质量和高功率的红外激光输出,是近年来新型中红外激光器件研究领域的热点。文中介绍了GaSb基光泵浦半导体碟片激光器增益芯片的外延结构和工作原理,综述了2μm波段GaSb基泵浦半导体碟片激光器的研究进展,讨论了该类激光器的波长扩展、功率提升、实现窄线宽短脉冲发射和有效热管理关键问题,评述了性能发展的主要技术方向和应用前景。

GaSb based optically pumped semiconductor disk lasers(OP-SDLs)attracts considerable attention in novel mid-infrared laser device research field for their potential excellent beam quality and high output power.The epitaxy structure and basic principle of GaSb based OP-SDLs wafers were summarized.The development of GaSb based OP-SDLs at 2μm wavelength was reviewed respectively by analyzing the aspects of wavelength extending,power scaling,line-width narrowing,short-pulse generation and effective thermal management.The technical development direction and application prospects of this type of laser were discussed.