摘要
本文制备了一种基于局部化学掺杂的单壁碳纳米管(SWCNT) p-i-n结二极管。在此器件中,单根SWCNT沟道的两端分别被掺杂成p型和n型,沟道中段保留为本征状态,从而在SWCNT中形成具有较强内建电场的p-i-n结,表现出二极管特性。所制二极管器件具有高的器件性能,其整流比可达10~3数量级、反向饱和电流仅为23 p A。此外,简要探讨了该结构二极管的工作原理。
Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits.A p-i-n junction diode was prepared from a SWCNT with one end p-type doped,the other end n-type doped and the middle segment undoped.The p-type doping was performed using triethyloxonium hexachloroantimonate to form an air stable charge transfer complex(SWCNT+-SbCl 6-)while polyethylene imine was used as an electron donor for the n-type doping.The device showed an excellent performance with a high rectification ratio of 10 3 and a low reverse saturation current of 23 pA.
作者
宋传娟
杨俊茹
廖成浩
刘晓东
王英
贺蓉
董续盛
钟汉清
刘一剑
张丽英
陈长鑫
SONG Chuan-juan;YANG Jun-ru;LIAO Cheng-hao;LIU Xiao-dong;WANG Ying;HE Rong;DONG Xu-sheng;ZHONG Han-qing;LIU Yi-jian;ZHANG Li-ying;CHEN Chang-xin(School of Mechanical and Electronic Engineering,Shandong University of Science and Technology,Qingdao 266590,China;Key Lab.for Thin Film and Microfabrication of the Ministry of Education,National Key Lab.of Science and Technology on Micro/Nano Fabrication,Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)
出处
《新型炭材料》
SCIE
EI
CAS
CSCD
北大核心
2018年第5期476-480,共5页
New Carbon Materials
基金
上海市浦江人才计划(15PJ1403300)
上海市“科技创新行动计划”国际合作项目(15520720200)
国家自然科学基金(61177052)
全国优秀博士学位论文作者专项资金(201154)
教育部霍英东青年教师基金(131064)。
