SiN-SiC纳米薄膜自旋相关的塞贝克效应研究

Spin-dependent Seebeck Effect of the SiN-SiC Nano Thin Film

热自旋电子学结合了自旋电子学和热电子学各自优势,对人类可持续发展具有十分重要的作用。本文提出了一种基于SiN-SiC纳米薄膜的新型热自旋电子学器件。发现在源极和漏极之间施加温度场,可以获得方向相反、大小几乎相同的具有自旋极化取向的电流,即为自旋相关塞贝克效应。而且,在热电荷流中还存在着热负微分电阻效应。这些发现为设计基于SiN-SiC纳米薄膜的高效率热自旋电子学器件提供了理论指导。

Spin caloritronics devices,a multifunctional device combining spintronics and caloritronics,are very important for sustainable development of human.Here,a new spin caloritronics device based on the SiN-SiC nano thin film were proposed.Spin-up and spin-down currents flowing in opposite directions due to the temperature gradient between the source and the drain were demonstrated.The results show that the spin-up and spin-down currents present nearly equal magnitudes,indicating a spin-dependent Seebeck effect.Moreover,a negative differential thermoelectric resistance can be obtained in the thermal electron current.Our results indicate that the SiN-SiC nano thin film can be designed as a highly-efficient spin caloritronics device.