摘要
在高耐压器件中,保持高耐压的同时减少漂移区电阻是提升器件性能的关键,超结理论的提出使器件在相同耐压下具有更小的漂移区电阻。通过利用Silvaco TCAD软件对器件结构参数进行了计算优化仿真,得到了击穿电压为1680V,比导通电阻为0.60mΩ·cm^2的超结VDMOS器件。
In high voltage devices,keeping high voltage withstand while reducing drift resistance is the key to improve the device performance.The proposed theory of super junction makes the device have smaller drift resistance under the same voltage withstand.Silvaco TCAD software is used to calculate and optimize the device structure parameters.The super junction VDMOS device with breakdown voltage of 1680V and on-resistance of 0.60mΩ·cm2 was obtained.
作者
郭心宇
白云
雷天民
GUO Xin-yu;BAI Yun;LEI Tian-min(School of Advanced Materials and Nano Technology,Xidian University,Xi’an 710071,China;High-Frequency High-Voltage Devices and Integrated Circuits R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《电工电能新技术》
CSCD
北大核心
2018年第10期27-31,共5页
Advanced Technology of Electrical Engineering and Energy
基金
国家重点研发计划项目(2016YFB0100601)
