期刊文献+

InAlN薄膜的变温椭圆偏振光谱研究

Investigation of In AlN thin film by temperature-dependent spectroscopic ellipsometry
下载PDF
导出
摘要 为了研究In Al N材料的光学参数随温度的变化特性,采用变温椭圆偏振光谱(25~600℃)测量技术对In Al N合金材料在193~1 650 nm宽光谱范围内进行了表征。利用Tauc-Lorentz振子模型描述和拟合变温椭偏光谱测量数据,得到了In Al N薄膜的光学常数(n、k和α)随温度的变化曲线。由变化曲线可见,在温度50~600℃,光学带隙从4. 56 e V减小到4. 35 e V,折射率峰值对应的能量则从4. 61 e V减小到4. 37 e V。两者都随温度升高而减小,其变化规律符合Varshni方程的预期。结果表明,在600℃以下测试温度条件下,In Al N合金材料的光谱和光学参数没有发生突变,说明In Al N合金材料具有高的热稳定性,并未发生影响材料光学性能的晶体结构变化。 In order to investigate the optical property variations of InAlN with temperature,InAlN alloy was characterized by temperature-dependent(25~600℃)spectroscopic ellipsometry in the spectral range of 193~1 650 nm.The optical constants(n,k andα)of InAlN thin film were fitted by temperature-dependent ellipsometry using the Tauc-Lorentz oscillator model.At the temperatures of 50~600℃,it was seen that the optical bandgap decreases from 4.56 eV to 4.35 eV,and the energy corresponding to the peak of refractive index decreases from 4.61 eV to 4.37 eV.Both of them decrease with the increase of temperature,which accords with the law of Varshni equation.The results show that no significant changes in spectra and optical parameters were observed under the test temperature conditions below 600℃,which indicates that the InAlN alloy has a higher thermal stability and has no effect of crystal structure changing on the material s optical properties.
作者 梁远兰 林涛 杨庆怡 万玲玉 冯哲川 LIANG Yuan-lan;LIN Tao;YANG Qing-yi;WAN Ling-yu;FENG Zhe-chuan(School of Physical Science and Technology,Guangxi University,Nanning 530004,China)
出处 《广西大学学报(自然科学版)》 CAS 北大核心 2018年第5期1954-1959,共6页 Journal of Guangxi University(Natural Science Edition)
基金 国家自然科学基金资助项目(61504030 61367004) 广西特聘教授(八桂人才和八桂学者)专项经费资助项目
关键词 InAlN合金 椭圆偏振光谱 变温 InAlN alloy spectroscopic ellipsometry temperature dependent
  • 相关文献

参考文献4

二级参考文献68

  • 1XUE JunShuai,HAO Yue,ZHANG JinCheng & NI JinYu Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China.Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers[J].Science China(Technological Sciences),2010,53(6):1567-1571. 被引量:4
  • 2Wu Y F, Saxler A, Moore M, et al. 30 W/mm GaN HEMTs by field plate optimization. IEEE Electron Dev Lett, 2004, 25:117-119.
  • 3Chu R M, Chen Z, Pei Y, et al. MOCVD-grown A1GaN buffer GaN HEMTs with V-gates for microwave power applications. IEEE Electron Dev Lett, 2009, 30:910-912.
  • 4Feng Z H, Zhou R, Xie S Y, et al. 18-GHz 3.65W/mm enhancement-mode A1GaN/GaN HFET using fluorine plasma ion implantation. IEEE Electron Dev Lett, 2010, 31:1386-1388.
  • 5Wong M H, Chu R M, Rajan S, et al. N-face metal-insulator-semiconductor high-electron-mobility transistors with A1N back barrier. IEEE Electron Dev Lett, 2008, 29:1101-1103.
  • 6Kuroda M, Ueda T, Tanaka T. Nonpolar AIGaN/GaN metal-insulator-semiconductor heterojunction field-effect tran- sistors with a normally off operation. IEEE Trans Electron Dev, 2010, 57:368-372.
  • 7Lu B, Matioli E, Palacios T. Tri-gate normally-off GaN power MISFET. IEEE Electron Dev Lett, 2012, 33:360-362.
  • 8Srisonphan S, Jung Y S, Kim H K. Metal-oxide-semiconductor field-effect transistor with a vacuum channel. Nat Nanotechnol, 2012, 7:504-508.
  • 9Gadanecz A, Blasing J, Dadgar A, et al. Thermal stability of metal organic vapor epitaxy grown AIInN. Appl Phys Lett, 2007, 90:221906-1 221906-3.
  • 10Chen C H, Liu H, Steigerwald D, et al. A study of parasitic reactions between NH3 and TMGa or TMA1. J Electron Mater, 1996, 25:1004-1008.

共引文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部