L波段GaN自偏压功率放大器

L-band GaN self-bias power amplifier

介绍了一款L波段自偏压内匹配功率放大器。器件采用0.25μm工艺GaN高电子迁移率晶体管(HEMT)管芯,内匹配技术对单胞管芯进行输入输出匹配,放大器的工作频带范围为1.2～1.4GHz。采用自偏压技术,单电源供电,使电路更为简洁,使用方便。工作电压为28V,占空比为10%,脉宽为300μs,在输入功率为26 dBm时,频带内输出功率在40 dBm以上,功率附加效率大于60%,充分显示了GaN功率器件在单电源模块中的性能优势。

An L-band self-bias internal matching power amplifier is proposed.The amplifier is fabricated by using 0.25μm GaN High Electron Mobility Transistor(HEMT)chips,and internal matching techniques are utilized to perform input-output matching,and the operating frequency band of the amplifier is 1.2-1.4 GHz.Using self-bias technology,and single power supply,the circuit is more simple and easy for use.The working conditions are 28 V,10%pulse duty ratio and 300μs pulse width;when the input power is 26 dBm,the output power in the band is greater than 40 dBm,and the power added efficiency is more than 60%,which fully shows the performance advantages of GaN power devices in a single power supply module.