摘要
利用磁控溅射方法在Gd3Fe5O12衬底上制备外延Y_3Fe_5O_(12)薄膜。在室温300K时,改变腔内氩气压得到不同气压下制备的Y_3Fe_5O_(12)薄膜。样品都在空气中进行后退火处理,退火温度800℃/2h,退火升温速率是180℃/h,降温速率是120℃/h。通过测试发现薄膜的特性及膜厚等都依赖沉积氩气压PAr,沉积气压为2.394Pa时,样品的磁特性较好。为了能充分利用Y_3Fe_5O_(12)纳米结构特性,利用电子束光刻蚀方法成功制备Y_3Fe_5O_(12)纳米量级结构阵列,分析磁阻尼因子变化。
Epitaxial Y 3Fe 5O 12 film was prepared on Gd 3Fe 5O 12 substrate by sputtering.Some Y 3 Fe 5 O 12 samples were gotten through changing argon gas pressure.And all samples were annealed in air at 800℃for 2 h by ramp up 180℃/h and ramp down 120℃/h.The results indicate that the thickness and properties for Y 3 Fe 5 O 12 depend on argon gas pressure.When the pressure is 2.39 Pa,the magnetization for Y 3Fe 5O 12 thin film is best.To apply Y 3Fe 5O 12 thin film better,nano Y 3 Fe 5 O 12 pattern was prepared via electron beam lithography.Meanwhile,the damping difference for nano Y 3Fe 5O 12 pattern and thin film was compared.
作者
李少珍
王秀章
LI Shaozhen;WANG Xiuzhang(School of Physics,Hubei Polytechnic University,Huangshi 435003,China;Advanced Materials Research Institute,Hubei Normal University,Huangshi 435002,China)
出处
《功能材料》
EI
CAS
CSCD
北大核心
2018年第10期94-97,共4页
Journal of Functional Materials
基金
国家自然科学青年基金资助项目(51302074)
国家自然科学一般面上基金资助项目(11374147)