GaN MOSFET高效谐振驱动电路设计及损耗分析

Design and loss of high efficient resonant driving circuit of GaN MOSFET

为了解决GaN MOSFET门极驱动的高损耗问题,对比分析了传统驱动和谐振门极驱动电路,提出一种新型谐振门极驱动电路,通过建立数学模型、LTspice仿真分析以及实验验证所提出门极驱动电路的正确性.其基本原理为利用谐振原理在开关管关断过程中通过L将存储在C中的能量反馈到电源中,使能量得到有效利用,从而减小功率损耗.结果表明:GaN MOSFET开通和关断的时间分别为12 ns和16 ns,能够实现开关管的快速开断;新型谐振驱动电路的门极损耗比传统GaN MOSFET驱动电路的损耗减小了55.56%,比普通谐振驱动电路的门极损耗减小了35.66%.

In order to solve the high loss problem of GaN MOSFET gate drive,a new resonant gate driver circuit is proposed by comparing the traditional and existing resonant gate driving circuit,the correctness of the proposed gate driving circuit is verified by mathematical model building,LTspice simulation and experiments.The basic principle is based on the resonance principle,during the switch off process,the energy stored in the C feedback to the power supply by L,to use the energy effectively,thus can reduce the power loss.The results show that,the opening and closing time of GaN MOSFET are 12 ns and 16 ns respectively,which can realize fast breaking of switch tube.The gate loss of the new resonant driving circuit is reduced by 55.56%compared with that of the traditional GaNMOSFETdriving circuit,and the gatelossofthe conventionalresonantdriving circuitisreduced by 35.66%.