氮气氛退火直拉硅中缺陷的低温红外光谱分析

Study the Defects in Czochralski Silicon after Annealing in Nitrogen Atmosphere by Low Temperature Fourier Transform Infrared Absorption Spectrometer

将直拉硅、微氮直拉硅样品在氮气氛保护下1 100℃退火8 h,以引入氮杂质。利用低温红外技术(20 K)获得样品的精细光谱。试验发现,在2 850、2 920cm^(-1)处出现2个吸收峰,吸收峰强度随样品中氧、氮含量的升高而升高,且快中子辐照样品中的强度强于未经快中子辐照样品。由此可以断定,这2个吸收峰强度与样品中氮、氧含量及辐照引入的空位缺陷有关,其所对应的缺陷组分可能为N_2V_2O_n。

Nitrogen is an important impurity in Czochralski silicon(CZ-Si).In order to introduce nitrogen,CZ-Si,nitrogen-doped Czochralski silicon(NCZ-Si)were annealed in nitrogen atmosphere at 1100℃for 8h,Fourier Transform Infrared Absorption Spectrometer(FTIR)was used to detect the infrared absorption spectrum.Two new defects related to absorption peaks located at 2 850 cm-1 and 2 920 cm-1 were found.Their densities increased with the increasing of oxygen and nitrogen concentration,and density in fast neutron irradiated was larger than that in non-irradiated.So,it can be concluded that the two absorption peaks are related to nitrogen,oxygen concentration and fast neutron irradiation.The defect's constituents may be N2V2O n,its precise constituents will be studied in the future.