摘要
文章设计实现了一款高精度、快速瞬态响应LDO电路。该设计采用高阶曲率补偿技术,以提高带隙基准电压的温度特性;采用多级熔丝修调技术,以提高基准电压和基准电流精度;采用调整管栅极寄生电荷泄放技术和负载电流泄放技术,以优化LDO快速瞬态响应特性。这里采用0. 6μm Trench SOI CMOS工艺设计、制造。测试结果表明,输出误差小于1%,瞬态响应特性与国外产品相当。
The design of a high-precision fast transient response LDO is presented in this paper.High order curvature compensation technology is used to improve the temperature characteristics of the bandgap reference and the precision of the reference voltage and reference current were improved by multistage fuse trimming.To optimize the transient response,the parasitic charge discharge technology and load current discharge technology are used.The LDO has been implemented in a 0.6μm Trench SOI CMOS process.The test results show that the output error is less than 1%,and the transient response characteristics are similar to those of foreign products.
作者
刘智
姜洪雨
梁希
葛梅
LIU Zhi;JIANG Hongyu;LIANG Xi;GE Mei(Xi’an Institute of Microelectronics Technology,Xi’an 710065,China)
出处
《空间电子技术》
2018年第5期42-45,共4页
Space Electronic Technology
基金
国家自然科学基金资助项目(61172169)
关键词
LDO
带隙基准
高阶曲率补偿
快速瞬态响应
LDO
Bandgap reference
High order curvature compensated
Fast transient response
