LaAlO_3/GaAs异质结界面的空穴导电行为分析

Hole conduction behavior at the heterojunction interface of LaAlO_3/GaAs

采用脉冲激光沉积方法在GaAs(001)单晶基片上生长LaAlO_3薄膜构成LaAlO_3/GaAs异质结,利用原子力显微镜和XRD对LaAlO_3/GaAs异质结进行表征,并通过PPMS对LaAlO_3/GaAs异质结进行面内电阻和霍尔电阻测试,研究其界面电输运性能。结果表明,LaAlO_3在GaAs表面生长均匀,LaAlO_3/GaAs异质结界面处存在空穴型的导电行为,且该空穴来源于界面处的悬空键效应。

LaAlO 3/GaAs heterojunctions were formed on GaAs(001)single crystal substrate by pulsed laser deposition method and characterized by atomic force microscope and XRD.The sheet resistance and Hall resistance of LaAlO 3/GaAs heterojunctions were tested by PPMS to study their interface electrical transport performance.The results show that LaAlO 3 grows uniformly on the surface of GaAs,hole pattern conductive behavior exists at the LaAlO 3/GaAs heterojunction interface,and the hole results from the suspension bond effect at the interface.