金属辅助化学刻蚀法制备尺寸可控的硅纳米线

Preparation of Silicon Nanowires with Controlled Size by Metal-assisted Chemical Etching

为制备粗细均匀、大长度的硅纳米线,通过金属辅助化学刻蚀方法,以银作为辅助金属,利用场发射扫描电镜(FESEM)和FIB/SEM双束系统作为检测手段,结合微加工工艺,研究了不同的反应离子刻蚀时间和化学刻蚀时间对制备的硅纳米线的尺寸和形貌的影响。结果表明,通过该方法制备的硅纳米线粗细均匀、长度较大。控制反应离子刻蚀时间和化学刻蚀反应时间,可以控制硅纳米线的形貌与尺寸。

To prepare silicon nanowires with uniform,large-length,metal-assisted chemical etching method with silver as the auxiliary metal was used.The field emission scanning electron microscopy(FESEM)and FIB/SEM dual beam systems were used as testing equipment and combined micro-machining process.The effect of different times of reactive ion etching and chemical etching on the size and morphology of the silicon nanowires were studied.The results show that the silicon nanowires prepared by the method have uniform thickness and large-length.In this experiment,the size of silicon nanowires are determined by the times of reactive ion etching and chemical reaction.