硫化铜三维纳米片/带结构的制备及场发射性能

Enhanced field emission from the copper sulfide 3-D nanosheets/nanobelts structured films by anodization

采用阳极氧化法,一步制备出了三维分布的硫化铜纳米片/带结构薄膜.实验发现,通过改变阳极氧化电流,可调控硫化铜纳米片/带结构的形貌演化,使之形成有利于场发射的三维合理分布.这既能生成更多的有效场发射位点,增强局域场,又可适当降低场屏蔽效应,几则协同作用使得硫化铜三维纳米片/带结构薄膜的场发射特性显著增强.开启电场可由8.2V·μm^(-1)降低至1.9V·μm^(-1),阈值场由13.5V·μm^(-1)降低至5.0V·μm^(-1),场增强因子最高可达6958.该硫化铜三维纳米片/带结构薄膜制备方法简便,开启电场低,电流密度较大,热稳定性好,在真空微纳米电子器件领域有潜在的应用前景.

We have prepared the copper sulfide three-dimensional(3-D)nanosheets/nanobelts structured films by one-step anodization method,and found that the samples morphological evolution and structural distribution were regulated by adjusting anodization current.The appropriate distribution of nanosheets and nanobelts could not only form more effective field emission sites and enhance local field,but also reduce field screening effects.All of these factors result in the significant enhancement of the field emission from the copper sulfide 3-D nanosheets/nanobelts films.The value of turn-on field could be dramatically reduced from 8.2 V·μm-1 to 1.9 V·μm-1,and the field enhancement factor could be reached up to 6958.Besides,the optimal copper sulfide 3-D nanosheets/nanobelts showed higher current density and long-term thermal stability.Our preliminary study suggests that the copper sulfide 3-D nanosheets/nanobelts would potentially serve as a promising field emitter in vacuum micro-or nano-electronics.