低阻硅TSV与铜TSV的热力学变参分析

Impact of Dimensions on Thermal-Mechanical Reliability of Low Resistivity Silicon-TSVs and Copper TSVs

硅通孔(through-silicon-via,TSV)是三维集成技术中的关键器件.本文对低阻硅TSV与铜TSV的热力学特性随各项参数的变化进行了比较.基于基准尺寸,比较了低阻硅TSV和铜TSV在350℃的工作温度下,最大von Mises应力和最大凸起高度之间的不同.基于这两种结构,分别对TSV的直径、高度、间距进行了变参分析,比较了不同参数下,两种TSV的热力学特性.结果表明,低阻硅TSV具有更好的热力学特性.

Through-silicon-vias(TSVs)has been identified as one of the most significant devices in 3D-integration.This paper addresses the comparative studies of two types of TSVs,i.e.copper-based TSVs(Cu-TSV)and low resistivity silicon pillar based TSVs(LRS-TSV),focusing on impact of geometric dimensions on their thermal-mechanical reliabilities.During the studies,finite element analysis(FEA)were utilized.First,based on the experimental dimension of the two kinds of TSV,the maximal protrusion height and thermal stress were simulated and compared under 350℃.Second,by changing the factors of experimental model such as TSV diameter,height and pitch,the difference of their thermal mechanical characteristics was investigated and compared.The results show that the LRS-TSV performs better in terms of thermal mechanical properties.