电流源型驱动在高功率密度IGBT5中的应用研究

Applied Research of Current Source Driver in High Power Density IGBT5

绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的不断发展也推动着驱动技术的发展。为了减小高功率密度IGBT开通损耗以及优化电流变化率di/dt,提升系统的功率密度和能量转换效率,使用一种具有转换速率控制功能的驱动芯片设计电流源型驱动。通过双脉冲实验平台进行测试,将结果与传统的电压源型驱动测试的结果进行对比、分析,从而验证该电流源型驱动在减小开通损耗和优化电流变化率di/dt方面的优势,为驱动电路的研究与设计提供参考。

The development of insulated gate bipolar transistor(IGBT)is promoting the development of driver tech-nology.To reduce the turn-on losses of high power density IGBT,optimize the current slew rate di/dt,and improve the power density and energy conversion efficiency of the system,a current source driver was designed using a driver integrated circuit(IC)with a function of slew rate control.A test was conducted on a double-pulse experimental platform,and the results obtained using the novel driver were compared with those using the traditional voltage source driver,which verified that the proposed current source driver had advantages in reducing turn-on losses and optimizing the current slew rate di/dt.The results in this paper provide reference for the research and design of driver circuit.