IrO_2/ZnO薄膜接触结构的制备及电学特性研究

Research on preparation and electrical properties of IrO_2/ZnO thin film contact structure

在氧化锌器件的应用中,高质量的金属/ZnO接触的制备是至关重要的问题。目前,在金属/ZnO接触的研究中,充当电极角色的多为不具有透明性的金属材料,使得氧化锌材料在光电子器件中的应用受到一定的限制。IrO2是一种既透明又导电的金属氧化物,具有较低的电阻率和较好的化学稳定性,其薄膜已被用作底电极和防热扩散层等。因此文中采用脉冲激光沉积方法(PLD)制备了IrO2/ZnO薄膜接触结构,用小角X射线衍射(XRD)对其进行表征,并测量该结构的电学特性。结果表明实验得到了生长良好的IrO2/ZnO薄膜接触结构,室温下为欧姆接触导电特性。

The preparation of the high-quality metal/ZnO contact is very crucial in ZnO device applications.At present,most of electrode roles are nontransparent materials in the metal/ZnO contact research,which makes the ZnO material applica-tion in optoelectronic devices limited to a certain extent.IrO2,as a transparent and conductive metallic oxide,has a low resistivi-ty and good chemical stability,whose thin film has been used as the bottom electrode and heat-proof diffusion layer.The pulsed laser deposition(PLD)method is adopted in this paper to prepare the IrO2/ZnO thin film contact structure which is represented by means of the small angle X ray diffraction(XRD).The electrical properties of the structure are measured.The experimental results show that the well-grown IrO2/ZnO thin film contact structure is obtained,which has an Ohmic contact conduction proper-ty at room temperature.