摘要
The photoluminescence(photoluminescence)spectra of PS(porous silicon)prepared via electrochemical etching are presented and analysed.The PL of samples was measured at various temperatures.The corresponding parameters of peaks(energy,intensity and FWHM)were calculated using a fitting procedure,where the PL spectrum was approximated by a set of Gaussian peaks.This model is based on the presumption that the emission of photons in the PL process represents independent events.The optimal number of peaks used in the model was estimated,where the residuum of the approximation was used as a criterion.The low thermal dependence of energies in the PL spectra(blue shift)indicates the strong influence of defects on the position of corresponding PL maxima.The observed increase of energies of peaks with temperature requires additional explanation.
