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MEMS高g加速度传感器高过载能力的优化分析 被引量:2

Optimization Analysis of High Overload Capability of MEMS High g Acceleration Sensor
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摘要 通过设计一个量程为15万克、抗过载为20万克的抗高过载能力的MEMS加速度传感器,分析了多种传感器的利弊,选择压阻式加速度传感器作为研究对象。创建该加速度传感器结构的力学模型,然后在模型上分析其结构的应力、频率及阻尼进行分析,完成结构参数的优化及确定。在ANSYS环境下,通过对结构的静态和模态仿真分析了该传感器的测量范围、安全系数、抗过载性能、频率响应及响应时间,确保该结构在20万克过载环境下可以安全可靠的工作。同时,根据静态应力仿真结果进行压敏电阻位置及结构参数的优化[1]。 The main task of the paper is designing a MEMS accelerometer,which can endure high overload environment with main index that includes measuring range 150000g and anti-overload 200000g.By comparing various kinds of sensors,the piezoresistive accelerometer is chosen as the research object.Firstly,based on the mechanic model of the structure,the analysis of stress,frequency and optimization of the structure is completed,and then the parameter of the structure is made.In addition,under the ANSYS environment,the measurement range,safety factor,anti-overload performance,frequency response and response time of the sensor are analyzed by static and modal simulation to ensure that the structure works safely and reliably in a 200000 g overload environment.Simultaneity,the placement and structure parameter of piezoresistors are optimized by the static stress simulation result.
作者 杜彬 Du Bin(Physical and Photoelectric Engineering Institute,Taiyuan University of Technology,Taiyuan Shanxi 030024,China;China Second Research Institute of China Electronics Technology Group Corporation,Taiyuan Shanxi 030024,China)
出处 《山西电子技术》 2018年第6期19-21,共3页 Shanxi Electronic Technology
关键词 高过载 压阻 加速度 传感器 high-overload piezoresistive accelerometer sensor
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