基于肖特基二极管的太赫兹准光探测器设计方法与成像性能研究（英文）

Design and imaging demonstrations of a terahertz quasi-optical Schottky diode detector

设计了一款太赫兹准光探测器,该探测器主要由砷化镓肖特基二极管芯片以及高阻硅透镜组成.为了减小所设计芯片的欧姆损耗,将天线图案生长在了半绝缘砷化镓层上.在335～350GHz频率范围内,准光探测器的实测电压响应率为1360～1650V/W,双边带变频损耗为10.6～12.5dB.对应估算的等效噪声功率为1.65～2pW/Hz^(1/2).基于所设计的准光探测器进行了成像实验,该实验分别在直接检波和外差探测两种模式间进行,成像结果表明所设计的太赫兹准光探测器能够满足太赫兹成像方面应用.

A terahertz quasi-optical detector has been presented,which is mainly composed of a GaAs antenna-coupled Schottky diode chip and a highly resistive silicon lens.In order to reduce the ohmic loss,the standard terahertz Schottky diode fabrication process has been improved by forming the antenna patterns on the semi-insulating GaAs layer.Experimental responsivity and DSB conversion loss of the quasi-optical detector are 1360~1650 V/W and 10.6~12.5 dB at 335~350 GHz range,respectively.The noise equivalent power(NEP)is estimated to be 1.65~2 pW/Hz 1/2.Imaging experiments based on this quasi-optical detector have been carried out in both direct-and heterodyne-detection modes,successfully demonstrating its potential in terahertz imaging applications.