硅基高精度镍铬薄膜电阻的制备和性能表征

Fabrication and Properties Characterization of Silicon-Based High Precision Nickel Chromium Film Resistors

集成无源元件(IPD)技术可以将分立的无源元件集成在衬底内部,提高系统的集成度。为了获得高精度的薄膜电阻,采用多层薄膜电路工艺在硅晶圆上制备了不同线宽的镍铬薄膜电阻,利用显微镜和半导体参数测试仪对薄膜电阻的图形线宽及电学特性进行了表征及测试。结果表明,制备出的镍铬薄膜电阻线宽精度在±5%以内,电阻精度在±0.5%以内,具有稳定的电学特性。基于镍铬的高精度硅基无源集成电阻器在系统集成中有广泛的应用价值。

Integrated passive device(IPD)technology can integrate passive devices into a substrate and improve system integration level.In order to obtain high precisionfilm resistors,nickel chromium film resistors with different line width have been fabricated on silicon wafer by multilayer film circuit technology.The thickness and the resistivity of the filmresistors have been analyzed by the step profiler and semiconductor parameter tester.The results show that the precision of nickel chromium film resistors can be within±0.5%and the film resistors have stable electrical properties.It is indicated that high precision nickel chromium film resistors by IPD technology has a extensive application prospect in system integration.