耦合间距对SOI微环谐振腔的性能影响

Influence of Coupling Gap on the Performance of SOI Microring Resonator

运用MEMS工艺制备了不同耦合间距的微环谐振腔,针对耦合间距与耦合系数、谐振深度的影响,进行了理论分析与仿真,并对结构进行耦合实验测试。测试结果表明,随着微环耦合间距的增加,耦合系数减小,谐振深度变浅,这与理论仿真一致。实际计算了相应的耦合效率、3 d B带宽及品质因数,随着耦合间距增大,耦合效率降低,3 d B带宽也随之变窄,微环谐振腔的品质因数逐渐提高。研究结果为微环谐振腔的进一步优化设计及其在相关领域中的研究与应用提供了依据。

Micro-ring Resonator with different coupling gap is prepared by MEMS technology.To acquire the relationships of coupling gap with coupling coefficient and resonance depth,the theoretical analysis,simulation and coupling experiment are carried out.Test results show that with the increase of the coupling gap,the coupling coefficient decreases and the resonant depth becomes shallow,which are consistent with simulation.We have actually calculated the corresponding coupling efficiency,3 dB bandwidth and quality factor and find that with the increase of the coupling spacing,the coupling efficiency decreases,the 3 dB bandwidth is also narrowed,and the quality factor of the microring resonator is gradually improved.The research results provide the basis for the further optimization design of the microring resonator and the research and application in the related fields.