摘要
采用磁控溅射方法在石英衬底上制备ZnO薄膜,利用XRD对薄膜结构进行表征,SEM表征薄膜的表面形貌,讨论了退火温度对薄膜结构和电学性质的影响。结果表明,在750℃快退火后,磷受主被激活,得到了p型ZnO:P薄膜。
ZnO films were prepared on quartz substrates by magnetron sputtering,the film structure was characterized by XRD,and the surface morphology of the films was demonstrated by SEM,and the effect of the annealing temperature on the electrical properties of the films was discussed.The results show that when the annealing temperature is 750℃,phosphorus is activated,p-type ZnO:P can be obtained.
作者
解玉鹏
王显德
XIE Yupeng;WANG Xiande(Jilin Institute of Chemical Technology,Jilin Jilin 132022)
出处
《大学物理实验》
2018年第6期5-8,共4页
Physical Experiment of College
基金
吉林化工学院校级项目(2015053)
吉林化工学院校级博士启动项目(2015129)
吉林化工学院重大科技项目(2015011)
关键词
磁控溅射
ZNO薄膜
P型
退火温度
magnetron sputtering
ZnO film
p type
electrical properties
