摘要
三氟碘甲烷由于其优良的蚀刻性能和安全环保的特性,是未来用于制造超大规模集成电路器件的精密刻蚀工艺极具潜力的氟碳类刻蚀气体的替代品。介绍了三氟碘甲烷的理化性质,综述了含氟化合物的蚀刻机制及三氟碘甲烷在蚀刻方面的优良性能和应用研究进展。
Due to trifluoroiodomethane(CF3I)excellent etching performance,safety and environmental protection characteristics,it is a potential substitute for fluorocarbon etching gases in the future precision etching process for manufacturing very large scale integration(VLSI)devices.This paper introduces the physical and chemical properties of CF3I,summarizes the etching mechanism of fluorinated compounds,and excellent etching performance and application research progress of CF3I.
作者
曾群
白占旗
刘武灿
何双材
张金柯
胡欣
缪光武
杜肖宾
ZENG Qun;BAI Zhanqi;LIU Wucan;HE Shuangcai;ZHANG Jinke;HU Xin;MIAO Guangwu;DU Xiaobin(State Key Laboratory of Fluorinated Greenhouse Gases Replacement and Control Treatment,Zhejiang Research Institute of Chemical Industry Co.,Ltd.,Hangzhou 310023,China)
出处
《低温与特气》
CAS
2018年第6期6-9,共4页
Low Temperature and Specialty Gases
关键词
三氟碘甲烷
刻蚀
含氟化合物
trifluoroiodomethane
etching
fluorinated compounds
