基于K-S检验法和ALTA的IGBT模块可靠性寿命分布研究

Reliability Lifetime Distribution of IGBT Module Based on K-S Test and ALTA

为了获得绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)的寿命信息及确定其寿命分布,提出了一种利用Kolmogorov-Smirnov检验法和加速寿命测试数据分析软件(accelerated life testing dataanalysissoftware,ALTA)对其加速寿命试验数据进行研究的新方法。该方法首先对IGBT模块寿命做对数正态分布假设,然后利用K-S检验法对一组IGBT加速寿命数据进行Weibull、对数正态等分布检验对比分析,进而利用ALTA对另一组IGBT加速寿命数据进行仿真分析,结果表明在阿伦尼斯(Arrhenius)加速模型下,IGBT模块寿命服从对数正态分布。该方法使得快速估算IGBT模块寿命成为可能。

In order to obtain the life information of insulated gate bipolar transistor(IGBT) and determine its life distribution,a new method was proposed to study the accelerated life test data of IGBT modules by means of KolmogorovSmirnov test and accelerated life testing data analysis software(ALTA).Firstly,the lifetime of IGBT module was assumed to obey lognormal distribution.Secondly,a group of IGBT accelerated life data were tested,compared and analyzed by Weibull and log-normal distribution test by using K-S test.Furthermore,the acceleration lifetime data of another group of IGBT were simulated and analyzed by ALTA.The results show that the IGBT lifetime is followed by log-normal distribution under the Arrhenius acceleration model.This proposed method makes it possible to quickly estimate the lifetime of IGBT module.