基于响应面法的直拉硅单晶生长工艺参数优化方法

Optimization of Cz Silicon Monocrystal Growth Process Parameters Based on Response Surface Method

在直拉法制备硅单晶的过程中,要得到优质的晶体必须建立合理的温度分布,而单晶炉内热场的分布与工艺参数的设定密切相关。其中以晶体转速、坩埚转速和拉速等三个工艺参数对热场分布的影响尤为显著。为了确定最佳热场分布下晶转、埚转及拉速的设定值,本文采用响应面算法通过方程拟合、回归分析等步骤求解这三个工艺参量与温度梯度之间的最佳函数模型,并在该模型下同时对这三个工艺参量进行优化分析,且通过仿真实验和拉晶实验表明该方法的有效性。

During the process of Cz method for silicon crystal, in order to get high quality crystal, the reasonable temperature distribution is very necessary. And the furnace temperature distribution is closely related to the process parameters, especially the influence of crystal rotation speed, crucible rotation speed and the magnetic field strength is particularly significant. In order to determine the value of the three parameters at the optimal temperature distribution, this paper uses the response surface method to establish the functions between the process parameters and the temperature gradient. Then we can get the optimal parameters at this model by the optimization method. Simulation and experiment resule show the effectiveness for the proposed method.