金属氧化物薄膜晶体管最新研究进展

Recent progress of metal oxide thin film transistors

薄膜晶体管(TFTs)为满足高性能平板显示器的发展需求,正经历着快速增长的态势,同时其应用也扩大到新型透明电子和功能型电子领域.基于大量文献和研究工作,阐述金属氧化物TFTs的发展历程,非晶硅、低温多晶硅以及有机物等半导体材料TFTs的研究现状,重点论述基于单一或多元金属组分以及复合纳米结构的高性能氧化物TFTs的关键性结构和迁移率.认为新型复合纳米结构的氧化物TFTs不仅在很大范围内影响现有的电子器件,而且也将应用于新型的显示、存储以及通信等重要领域.这些新型薄膜材料以及薄膜电子器件未来将会在超越传统薄膜电子领域呈现全新的局面.

Thin film transistors(TFTs)are undergoing rapid growth in order to meet the development needs of high-performance flat panel displays,and also expanding to such fields as new transparent electronics and functional electronic devices.Based on literature review and research,the development of metal oxide TFTs,the research status of amorphous silicon,low temperature polycrystalline silicon and organic semiconductor materials TFTs are discussed.On this basis,the key structure and mobility of high performance oxide TFTs with single or multiple metal components and composite nanostructures are expatiated.Therefore,the new oxide TFTs will not only affect the existing electronic devices in a large range,but also be applied to new important fields such as display,storage and communication.It can also open up brand new opportunities beyond traditional electronics.