氧化铟纳米线场效应晶体管制备及其电学性能

Preparation and electrical properties of indium oxide nanowire field-effect transistors

为获得大量高质量、且尺寸均一的氧化铟纳米线,以高纯度氧化铟粉末与石墨粉末的混合物为原材料,利用化学气相沉积法制备出尺寸约50nm的氧化铟纳米线.分别以二氧化硅(SiO2)、氮化硅(Si3N4)和氧化铪(HfO2)材料作为栅极绝缘层,计算分析其构筑的场效应晶体管的电学性能(迁移率、阈值电压、开关比等).对比3种场效应晶体管可知以氮化硅为栅绝缘层材料,提升器件电学性能是最直接也是效果最显著的.其器件的电学性能优于其它2种.其器件的迁移率高达149cm2·V-1·s-1,器件的开关比高达107.

In order to obtain a large number of high-quality and uniform-sized indium oxide nanowires,using a mixture of high-purity indium oxide powder and graphite powder as a raw material,the In2O3 nanowires in size of 50 nm were processed by chemical vapor deposition.With silicon dioxide(SiO2),silicon nitride(Si3N4)and hafnium oxide(HfO2)as the gate insulating layer,the electrical properties of the field-effect transistors(FET)were calculated and analyzed,such as mobility,threshold voltage and switching ratio.From the analysis of the three field-effect transistors,it shows that silicon nitride is used as gate insulator material.The electrical performance of the device is the most direct and effective,and the electrical performance of the device is better than the other two kinds.The mobility of the device is as high as 149 cm^2·V^-1·s^-1,and the switching ratio of the device is as high as 10^7.