大气压介质阻挡放电等离子体辅助原子层沉积氧化铝阻隔膜

Deposition of Al_2O_3 Barrier Film by the Atmospheric Pressure Dielectric Barrier Discharge Plasma Enhanced ALD

为了研究纳米氧化铝对双向拉伸聚对苯二甲酸乙二醇酯薄膜(BOPET)阻隔性能的影响,利用自行设计加工的大气压介质阻挡放电(DBD)等离子辅助原子层沉积(PAALD)设备,使用三甲基铝(TMA)和氧气等离子体(O_2)在厚度为120μm的BOPET上生长氧化铝(Al_2O_3)无机层。采用椭圆偏振仪、原子力显微镜、红外光谱仪、X射线光电子能谱分析和透湿仪等分别对氧化铝薄膜的厚度、表面形貌、成分和水蒸气透过率等进行测量和表征。结果表明,大气压DBD等离子体辅助沉积Al_2O_3薄膜具有ALD生长特性,生长速率为0.27nm/周期,高于在低压下由等离子体辅助ALD沉积的Al_2O_3的生长速率;生长的氧化铝薄膜结构致密、表面粗糙度小,薄膜成分较纯;其水蒸气透过率(WVTR)由PET原膜的3.17g/(m^2·d)低至0.05g/(m^2·d)。

An inorganic thin film of alumina was deposited on the biaxially oriented PET film with a thickness of 120μm as a barrier layer using TMA(Trimethylaluminum,TMA)and an oxygen plasma by using a self-built atmospheric pressure plasma-assisted atomic layer deposition equipment.The thickness,surface morphology,composition and water vapor transmission rate of the deposited films were characterized by ellipsometry,atomic force microscopy(AFM),Fourier transform infrared spectroscopy(FTIR),X-ray photoelectric spectroscopy(XPS)and Moisture meter.The results show that the Al 2O 3 films deposited on BOPET have ALD growth characteristics.The growth rate of the Al 2O 3 film is 0.27 nm/cycle,which is much higher than that deposited by plasma-assisted ALD under low pressure.The deposited film is very dense with low surface roughness and carbon content.The water vapor transmission rate(WVTR)of the deposited film at atmospheric pressure is as low as 0.05 g/(m^2·d),which is lower than that of the original film(3.17 g/(m^2·d)).