摘要
负阻器件共振隧道二极管RTD和局部有源的忆阻器两者均在I-V特性上具有微分负阻NDR特性且具有多种阻态。根据该特性,研究并设计了基于RTD的开关单元电路,仿真结果显示:该单元电路具有与忆阻器部分相似的滞回特性、阈值电压以及高低阻态特征。分析了RTD的MOS-NDR网络中MOS管的沟道宽长比W/L参数变化对RTD开关单元滞回特性的影响。设计的RTD开关单元与忆阻器特性上具有相似性,可应用于门限忆阻器适用的逻辑电路、存储器、神经网络和RTD与忆阻器相结合的研究设计中。
The resonant tunneling diode(RTD) and the local active memristor have both differential negative resistance(NDR) characteristics on I-V,and have multi-resistance states.According to the similarity of RTD and memristor on the characteristic,a RTD switching unit circuit with hysteresis characteristic is designed.The simulation results show that the circuit has the hysteresis characteristics,threshold voltage and high/low resistance.The effect of various parameters on the hysteresis characteristics of RTD switching unit is analyzed.This feature can be applied to the research and design of logic ciruit,memory unit,neural network and threshold memristor with RTD.
作者
潘文剑
林弥
吕伟锋
PAN Wenjian;LIN Mi;LV Weifeng(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)
出处
《杭州电子科技大学学报（自然科学版）》
2019年第1期13-17,共5页
Journal of Hangzhou Dianzi University：Natural Sciences
基金
国家自然科学基金资助项目(61571171
61302009)
浙江省自然科学基金资助项目(LY18F040005)
关键词
微分负阻
RTD
滞回特性曲线
忆阻器
differential negative resistance
RTD
hysteresis characteristic curve
memristor
