碳化硼薄膜制备技术研究进展

Preparation Methods of Boron Carbide Thin Films

本文归纳了碳化硼薄膜的主要特性以及近年来在功能陶瓷、热电元件等方面的广泛应用。总结了目前物理气相沉积(PVD)和化学气相沉积(CVD)技术制备碳化硼薄膜的主要方法,包括磁控溅射法、离子束蒸镀法、经典化学气相沉积法(c-CVD)、等离子增强化学气相沉积法(PECVD、激光化学气相沉积法(LCVD)和热丝化学气相沉积法(HFCVD)等,讨论了各种沉积技术制备碳化硼薄膜工艺中各种实验参数对薄膜生长过程的影响,并对该领域今后的研究方向进行了展望。

This review summarized the characteristics of boron carbide films,and wide applications in functional ceramics,thermoelectric devices recently.The methods for the preparation of boron carbide films by physical vapor deposition(PVD)and chemical vapor deposition(CVD)techniques have been generalized,including magnetron sputtering,ion beam evaporation,classical chemical vapor deposition(c-CVD),and plasma enhanced chemical vapor deposition(PECVD),laser chemical vapor deposition(LCVD),and hot filament chemical vapor deposition(HFCVD).Finally,the effects of various experimental parameters on the growth process of thin films in preparation of boron carbide thin films by various preparation methods and prospect of applying in the functional materials have been discussed,respectively.