拉伸石墨烯中缺陷电子态的研究

Study on defect electronic state of strained graphene

石墨烯中的拉伸效应和杂质效应都有着丰富的研究价值。首先,通过拉伸可以使石墨烯的能谱出现能隙。在拉伸的石墨烯中引入单个空位缺陷时,可以在能隙中诱导出局域的零能隙间态。当引入2个空位缺陷时,零能隙间态会发生能级劈裂,能级劈裂的大小可以用来衡量2个缺陷之间有效的跃迁。另外,在考虑母体电子相互作用的情况下,缺陷诱导的零能局域态存在有效的在位哈伯德相互作用,其大小与局域态的局域程度有关。基于该性质,在拉伸石墨烯中引入缺陷阵列时,缺陷所诱导的零模之间形成有效的哈伯德模型,因此,具有缺陷阵列的拉伸石墨烯可以作为一个平台对哈伯德模型进行量子模拟。

In graphene,the strained effect and defects have abundant research values.First,for strained graphene,the energy gap appears under strain effect.We find single vacancy in strained graphene will induce a localized zero mode.The energies of the localized zero mode will split when two vacancies become close,and the energy gap can be used to measure the effective transition between the two vacancies.In addition,considering parent’s electron interaction,there exists an effective Hubbard interaction between two electrons on a localized state.Based on these results,the zero modes induced by vacancies in strained graphene form Hubbard model.Therefore,the strained graphene is a potential platform for quantum simulating of Hubbard model.