一种新型SOI绝缘硅复合材料的制备与性能表征

Preparation and characterization of a novel SOI insulating silicon composite

提出了一种新型SOI绝缘硅材料及其制备方法。通过高温工艺制备SiO_2-Ta_2O_5-B_2O_3-RO复合粉体,以其为中间层,将上下两层单晶硅片在700～800℃熔凝从而获得Si-insulator-Si 3层结构体。结果表明该样品层间结合紧密、分布均匀,具有良好的高压绝缘性能和介电性能。其绝缘层厚度、深度和性能参数可调,是一种新型的厚膜SOI绝缘硅复合材料。

A new kind preparation method of a novel SOI insulating silicon material has been developed in this paper. The SiO2-Ta2O5-B2O3-RO composite powder was prepared through high temperature sintering, and the three-layer-structure of Si-Insulator-Si was obtained via welding two layers of mono-crystalline silicon at 700-800 ℃ with the SiO2-Ta2O5-B2O3-RO as the intermediate layer. The test results showed that the sample layers bounded tightly and integrally, and the high voltage insulation and dielectric properties were excellent while the thickness, depth and performance parameters of the insulating layer were adjustable. It could be regarded as a novel thick film SOI insulating silicon composite.