大功率器件及材料的热特性表征技术研究进展

Research Progress on the Thermal Characterization Technology of High Power Device and Material

以氮化镓(GaN)为代表的第三代半导体高功率密度的发展受限于自身热积累效应引起器件结温升高问题,严重导致器件性能和可靠性的下降。因此,器件的热管理已成为大功率器件研发和应用领域的一个重要研究方向,而器件本身及其材料的热特性表征贯穿于功率器件散热技术开发的整个过程,是评估和指导热管理研发的重要途径。为此,综述了国内外正在开展的器件芯片级热特性表征技术研究进展,系统分析了器件结温、外延薄膜热导率、界面热阻等热性能表征技术的优势及局限性,并阐述了这些热性能表征技术对芯片级热管理开发提供的技术指导及其面临的技术挑战。

With development toward high power density of the third-generation semiconductor,represented as GaN devices,the performance and reliability of power devices will be degraded seriously,limited by heat accumulation problem which leads to the rise of junction temperature.Thus,the thermal management has become an important area in the research and application of power device,and the thermal characterization of the device and self material,which appears throughout the whole development process of dissipation techniques,is a critical evaluation and direction about thermal management.For this,research progress of advanced thermal characterizations for chip-level heat dissipation technology is reviewed in detail,and the advantages and limitations of thermal characterizations,including junction temperature of device,thermal conductivity of epitaxial film and thermal boundary resistance,are analyzed systemically.Meanwhile,the technical guidance and challenges of those thermal characterizations for chip-level thermal management are expressed.