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无片上电感的低功耗高线性度CMOS混频器

An inductorless low power high linearity CMOS mixer
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摘要 物联网设备的数量将在不久的将来得到快速增长。延长电池寿命、提高信号动态范围是物联网通信系统射频前端的主要关注点。为解决射频前端功耗和线性度的问题,提出了一种改进型的吉尔伯特混频器。相比于传统吉尔伯特混频器,该混频器在跨导级采用工作在亚阈值区的PMOS/NMOS互补结构,结合了电流复用技术和导数叠加技术,实现了功耗和线性度的折中;并采用交叉电容耦合形成负阻抗,抵消了寄生电容的影响,从而在低功耗情况下提高了线性度。基于HHNEC 0.18μm Bi CMOS工艺后仿真结果表明,该混频器在射频频率0.4~3 GHz时转换增益为6.2~7.6 d B,在2.4 GHz频率下输入三阶交调点(input third-order intercept point,IIP3)为14.96 d Bm,在电源电压为1 V的情况下功耗为1.8 m W。该混频器核心电路尺寸为460μm×190μm。与相关工作对比,该混频器具有低功耗、高线性度的特点。 The number of internet of things (IOT) devices is expected to increase rapidly in the near future. Prolonging battery life and improving signal dynamic range of RF front end of the communication system are the major concerns for IOT applications. In order to solve the problem of RF power consumption and linearity, a novel Gilbert mixer is proposed. Compared with the conventional Gilbert mixer, the proposed mixer utilizes subthreshold PMOS/NMOS complementary structure at the transconductance stage and combines the current reuse and derivative superposition technologies, realizing a trade-off between power consumption and linearity. The mixer also employs two cross-coupling capacitors to generate the negative impedance which cancels parasitic capacitance, achieving high linearity with low power consumption. Implemented in HHNEC 0.18 μm BiCMOS process, the post simulation results show that the mixer has a gain of 6.2~7.6 dB from 0.4 GHz to 3 GHz and a IIP3 of 14.96 dBm at 2.4 GHz while having a power consumption of 1.8 mW from 1 V supply voltage. The mixer core circuit size is 460 μm × 190 μm. Compared with other work, the mixer has the advantages of low power consumption and high linearity.
作者 文枭鹏 张为 刘艳艳 WEN Xiaopeng;ZHANG Wei;LIU Yanyan(School of Microelectronics, Tianjin University, Tianjin 300072, P. R. China;College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, P. R. China)
出处 《重庆邮电大学学报(自然科学版)》 CSCD 北大核心 2019年第1期89-94,共6页 Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)
基金 国家重点研发计划(2016YFE0100400)~~
关键词 混频器 负阻抗 导数叠加 低功耗 高线性度 mixer negative impedance derivative superposition low power high linearity
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  • 1Vidojkovic V,van der Tang J,Leeuwenburgh A,et al.A low-voltage folded-switching mixer in 018 μm CMOS[J]..IEEE Journal of Solid-State Circuits.2005,40(6):1259-1264.
  • 2Shen Dongjun,Li Zhiqun.A 2.4 GHz low power folded down-conversion quadrature mixer in 0.18-μm CMOS //2011 International Conference on Wireless Communications and Signal Processing.Nanjing:IEEE,2011:1-4.
  • 3Darabi H,Abidi A A.Noise in RF-CMOS mixers:a simple physical model[J].IEEE Transactions on Journal of Solid-State Circuits.2000,35(1):15-25.
  • 4Park J,Lee C H,Kim B S,et al.Design and analysis of low flicker-noise CMOS mixers for direct-conversion receivers[J].IEEE Transactions on Microwave Theory and Techniques.2006,54(12):4372-4380.
  • 5Jiang Mei,Zhang Xing,Liu Shan,et al.Low voltage,low power,downconversion folded-switching mixer with current-reuse technology //2011 International Conference of Electron Devices and Solid-State Circuits.Tianjin:IEEE,2011:1-2.
  • 6Chen I C,Yang J R.2~13GHz broadband CMOS low voltage mixer with active balun designed for UWB systems // 2010 IEEE International Conference of Electron Devices and Solid-State Circuits.Hongkong:IEEE,2010:1-4.
  • 7Zain W S W,Prodromakis T,Toumazou C.A bulk-driven ISFET-based chemical mixer //2010 IEEE Biomedical Circuits and Systems Conference.Paphos:IEEE,2010:134-137.
  • 8Kuo C L,Huang B J,Kuo C C,et al.A 10~35 GHz low power bulk-driven mixer using 013μm CMOS process[J]..IEEE Microwave and Wireless Components Letters.2008,18(7):455-457.
  • 9Wang C Y,Tsai J H.A 51 to 65 GHz low-power bulk-driven mixer using 013μm CMOS technology[J]..IEEE Microwave and Wireless Components Letters.2009,19(8):521-523.
  • 10褚云飞,孙玲玲,文进才.电流注入CMOS混频器的设计及特性分析[J].微电子学,2007,37(6):806-810. 被引量:6

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