不同设计参数对SOI射频开关小信号的影响

Analysis the scatter parameter of SOI RF switch with different design structure

基于0.2μm SOI RF工艺平台,设计了串联支路、并联支路、单刀单掷、单刀双掷等电路结构,分析研究了单级宽度、级联数目、偏置电阻、偏置电压等设计参数对射频开关小信号特性的影响。通过实验数据,讨论各参数对射频开关小信号特性,主要包括射频开关的插入损耗和隔离度的影响,为射频开关设计提供参考。

Based on commercial 0.2μm SOI RF process platform,the influence of stack,width,bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated,including series branch,shunt branch,single-pole-single-throw,and single-pole-double-throw.The impacts of different design on RF switch insertion loss and isolation are discussed in detail.The result can be reference as device optimization and circuit design.