期刊文献+

铜铟镓硒薄膜太阳能电池新型图形化透明前电极研究 被引量:4

Improved Performance of CuInGaSe_2 Solar Cells with Patterned Front Contact
下载PDF
导出
摘要 为了优化铜铟镓硒薄膜太阳能电池的前电极,提高铜铟镓硒薄膜太阳能电池的效率,提出了一种可应用于铜铟镓硒薄膜太阳能电池的AZO/图案化Ag薄膜/AZO结构的前电极,中间层的Ag薄膜与电池顶层的金属栅线具有完全相同的图案和尺寸,并且位于金属栅线的正下方,这种新型结构可以提高电池前电极的电学性能,但对电池来说不会带来额外的光学损失。对比了新型前电极结构与几种传统前电极的电学和光学性能,并且制备了相应的电池进行了性能对比。实验结果表明,新型的前电极结构可以提高铜铟镓硒薄膜太阳能电池的短路电流,相对传统AZO电极,电池效率从13. 83%提高到14. 53%。本结构可以明显提高电池效率。 In order to improve the efficiency of CIGS thin film solar cell,a novel AZO/patterned Ag/AZO multilayer front contact was investigated.In this architecture,middle Ag thin film is patterned,which has the identical shape and size with the metal grid of solar cell and under the metal grid.This architecture can increase the electrical properties when the transmittance is constant.The transmittance and sheet resistance of new architecture were compared with that of traditional front contact.In comparison with the solar cell with AZO and AZO/Ag/AZO front contact,the CIGS solar cell with new architecture shows the higher short circuit current and improves efficiency from 13.83%to 14.53%.The noval architecture can improve the efficiency of CIGS solar cell.
作者 郭凯 张传升 GUO Kai;ZHANG Chuan-sheng(Chongqing Shenhua Thin Film Solar Cell Sciences&Technology Ltd.,Chongqing 400700,China;China Energy Conversation and Emission Reduction Co.,Ltd.,Beijing 100011,China;National Institute of Clean-and-Low-Carbon Energy,Beijing 102208,China)
出处 《发光学报》 EI CAS CSCD 北大核心 2019年第2期204-208,共5页 Chinese Journal of Luminescence
基金 北京市重大科技成果转化落地培育项目(Z111103059411028)资助~~
关键词 铜铟镓硒 前电极 AZO/图案化Ag/AZO AZO/Ag/AZO 溅射 CIGS front contact AZO/patterned Ag/AZO AZO/Ag/AZO sputtering
  • 相关文献

参考文献3

二级参考文献41

  • 1Fahland M,Karlsson P,Charton C.Low resisitivity transparent electrodes for displays on polymer substrates[J].Thin Solid Films,2001,392:334-337.
  • 2Tak Y H,Kim K B,Park H G,etal.Criteria for ITO (indium-tin-oxide) thin film as the bottom electrode of an organic light emitting diode[J].Thin Solid Films,2002,411:12-16.
  • 3Fortunato E,Barquinha P,Goncalves G,et al.High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors[J].Solid-State Electronics,2008,52:443-448.
  • 4Calnan S,Hapkes J,Rech B,et al.High deposition rate aluminium-doped zinc oxide films with highly efficient light trapping for silicon thin film solar cells[J].Thin Solid Films,2008,516:1242-1248.
  • 5Zhang D H,Yang T L,Ma J,etal.Preparation of transparent conducting ZnO:Al films on polymer substrates by r.f.magnetron sputtering[J].Applied Surface Sciences,2000,158:43-48.
  • 6Minami T,Sonohara H,et al.Highly transparent and conducyive zinc-stannate thin films prepared by r.f.magnetron sputtering[J].Jpn J Appl Plays,1994,33:L1693-L1696.
  • 7Yang T L,Zhang D H,Ma J,et al.Transparent conducting ZnO:A1 films deposited on organic substrates deposited by r.f.magnetron-sputtering[J].Thin Solid Films,1998,326:60-62.
  • 8Liu Xuanjie,Cai Xun,Mao Jifang,et al.ZnS/Ag/ZnS multilayer films for transparent electrodes in flat display application[J].Applied Surface Science,2001,183:103-110.
  • 9Bender M,Seelig W,Daube C,et al.Dependence of film composition and thicknesses on optical and electrical properties of ITO-metal-ITO multilayers[J].Thin Solid Films,1998,326:67-71.
  • 10Choi K H,Kim J Y,Lee Y S,et al.ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode[J].Thin Solid Films,1999,341:152-155.

共引文献5

同被引文献27

引证文献4

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部