摘要
为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。
In order to improve the packaging quality and efficiency of semiconductor lasers,tube furnaces were introduced into the bulk package using fixtures.Since the quality of the package directly affected the output characteristics and service life of the semiconductor laser,the 808 nm chips were grown by MOCVD,and the influence of the tube furnace temperature and the packaging time on the package quality of the double-sided AuSn packaged semiconductor laser bar was analyzed.Using X-ray detection,junction voltage,photoelectric characteristics parameters and“smile”effect testing methods,the optimal package conditions for the tube furnace package semiconductor laser bars were determined,providing guidance for future industrialization.
作者
袁庆贺
张秋月
井红旗
仲莉
刘素平
马骁宇
YUAN Qing-he;ZHANG Qiu-yue;JING Hong-qi;ZHONG Li;LIU Su-ping;MA Xiao-yu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2019年第2期231-237,共7页
Chinese Journal of Luminescence
基金
国家自然科学基金(41414010302)资助项目~~