锥形半导体激光器研究进展

Progress of tapered semiconductor diode lasers

锥形半导体激光器具有高功率、高光束质量等特点,因此受到广泛关注并成为研究热点。从3种结构(传统结构、分布式布拉格反射(DBR)结构、侧向光栅条纹结构)的锥形半导体激光器出发,对国内外近十年具有代表性研究成果进行综述,介绍其理论研究和实验进展,并对锥形半导体激光器的未来发展进行展望。

Tapered semiconductor lasers are characterized by high power and high beam quality.As a result,they have attracted much attention and have become a widely researched topic.This review focuses on the three main structures of tapered semiconductor diode lasers:the traditional structure,the distributed Bragg reflector(DBR)structure and the lateral grating structure.This paper summarizes the results of domestical and international representative research from the past ten years,introduces its theoretical research and experimental progress,and predicts the future development of tapered semiconductor lasers.