摘要
阐述了VGF法SI-GaAs单晶生长工艺中非平坦形固液界面形成的原因,分析了由此导致的单晶尾部径向电阻率不均匀性分布及单晶可利用率低的原因。在等径生长阶段引入VB走车工艺,并通过实验验证了VB走车工艺的应用效果,有效改善了固液界面形状和单晶尾部电阻率不均匀性,提升了SI-GaAs单晶的可利用长度。
In the paper,the reasons of the formation of non-flat solid-liquid interface during SI-GaAs single crystal growth by VGF method were described.Based on this the reasons of the formation of non-uniformity distribution of radial resistivity at tail of single crystal and low availability were analyzed.Adding VB technology in the equal diameter stage,the application effects of VB technology were verified by experiments,which effectively improves the solid-liquid interface shape and tail resistivity inhomogeneity of single crystal and increases the length of the available SI-GaAs single crystal.
作者
边义午
BIAN Yiwu(The 46th Research Institute of China Electronics Technology Group Corporation,Tianjin 300220,China)
出处
《天津科技》
2019年第2期21-23,共3页
Tianjin Science & Technology
